STF57N65M5

Производится
STF57N65M5 - Stmicroelectronics
Увеличить
Краткое описание: 650V 42A N-CH MOSFET TO-220FP 63mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this component boasts fast switching characteristics with a 19ns fall time. Maximum power dissipation is rated at 40W, operating across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ V
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 63mR
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 4.2nF
Power Dissipation 40W
Turn-On Delay Time 73ns
Radiation Hardening No
Turn-Off Delay Time 12ns
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 63mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 42A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 63mR
Drain to Source Breakdown Voltage 650V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.