STF5N62K3
Производится
Увеличить
Краткое описание:
620V N-CH MOSFET 4.2A 1.6R TO-220FP
Дополнительная информация
N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 4.2A continuous drain current. This SuperMESH3™ device offers a low 1.6 Ohm maximum drain-source on-resistance and is housed in a TO-220FP package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage, 680pF input capacitance, and fast switching times with a 12ns turn-on delay and 21ns fall time. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 25W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.6R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 680pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.6R |
| Drain to Source Breakdown Voltage | 620V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
