STF7N52K3
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Краткое описание:
525V 6A N-CH MOSFET TO-220FP 850mR Power Transistor
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET in TO-220-3 package. Features 525V drain-to-source breakdown voltage and 6A continuous drain current. Offers 850mΩ drain-to-source resistance at a nominal Vgs of 3.75V. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 19ns. Maximum power dissipation is 25W, operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Nominal Vgs | 3.75V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 870pF |
| Power Dissipation | 25W |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain to Source Breakdown Voltage | 525V |
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