STF7N60M2

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STF7N60M2 - Stmicroelectronics
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Краткое описание: 600V 5A N-CH MOSFET TO-220FP 0.86 Ohm
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 0.86 Ohm typical drain-to-source resistance, with a maximum of 950mR. Housed in a TO-220FP package, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 20W. Key switching characteristics include a 7.6ns turn-on delay, 15.9ns fall time, and 19.3ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 15.9ns
Packaging Rail/Tube
Rds On Max 950mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 271pF
Number of Channels 1
Turn-On Delay Time 7.6ns
Radiation Hardening No
Turn-Off Delay Time 19.3ns
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 860mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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