STF80N10F7
Снят с производства
Краткое описание:
N-Channel MOSFET, 100V, 40A, 8.5mΩ Rds(on), TO-220FP
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 40A continuous drain current. Offers low on-resistance with a typical 0.0085 Ohm and a maximum of 10mR. Designed with STripFET F7 technology for efficient switching, exhibiting a 15ns turn-on delay and 21ns fall time. Packaged in a TO-220FP for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 30W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.079014oz |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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