STF8N80K5

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STF8N80K5 - Stmicroelectronics
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Краткое описание: 800V 6A N-CH MOSFET TO-220FP 0.8 Ohm Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 6A continuous drain current. Offers 0.8 Ohm typical drain-to-source resistance with a maximum of 950mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with turn-on delay of 12ns and fall time of 20ns. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device is lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.6mm
Series SuperMESH5™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 950mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 450pF
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 950mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 800V
Drain to Source Breakdown Voltage 800V