N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 6A continuous drain current. Offers 0.8 Ohm typical drain-to-source resistance with a maximum of 950mR. Designed for through-hole mounting in a TO-220FP package, this component boasts fast switching speeds with turn-on delay of 12ns and fall time of 20ns. Maximum power dissipation is 25W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant device is lead-free.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.6mm |
| Height |
16.4mm |
| Length |
10.6mm |
| Series |
SuperMESH5™ |
| Polarity |
N-CHANNEL |
| Fall Time |
20ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
950mR |
| Package/Case |
TO-220-3 |
| RoHS Compliant |
Yes |
| Package Quantity |
50 |
| Input Capacitance |
450pF |
| Turn-On Delay Time |
12ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
32ns |
| Max Power Dissipation |
25W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
950mR |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
6A |
| Drain to Source Voltage (Vdss) |
800V |
| Drain to Source Breakdown Voltage |
800V |