STF9N60M2

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STF9N60M2 - Stmicroelectronics
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Краткое описание: 600V 5.5A N-CH MOSFET TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. Offers low 0.72 Ohm typical drain-source resistance and 780mR maximum Rds On. Designed for through-hole mounting in a TO-220FP package, this device boasts fast switching speeds with turn-on delay of 8.8ns and fall time of 13.5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 20W. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™ II Plus
Polarity N-CHANNEL
Fall Time 13.5ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 780mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 320pF
Turn-On Delay Time 8.8ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 780mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 5.5A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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