STF9NM50N
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Краткое описание:
500V 7.5A N-CH MOSFET, 560mR Rds(on), TO-220
Дополнительная информация
N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a low 560mΩ Rds On and is housed in a TO-220-3 package. Key electrical characteristics include 11ns turn-on delay and 45ns turn-off delay, with input capacitance at 570pF. Maximum power dissipation is 25W, operating between -55°C and 150°C, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.3mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Packaging | Rail/Tube |
| Rds On Max | 560mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 570pF |
| Power Dissipation | 25W |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 560mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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