STFI40N60M2

Снят с производства
STFI40N60M2 - Stmicroelectronics
Краткое описание: 600V 34A N-CH MOSFET, 88mR Rds On, TO-262
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 600V drain-source voltage and 34A continuous drain current. Features 88mΩ maximum drain-source on-resistance and 650V breakdown voltage. Operates within -55°C to 150°C, with 40W maximum power dissipation. Packaged in a TO-262-3 (I2PAKFP) through-hole mount. Includes fast switching characteristics with 20.5ns turn-on delay and 11ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 10.8mm
Length 10.4mm
Series MDmesh™ II Plus
Weight 0.079014oz
Polarity N-CHANNEL
Fall Time 11ns
Packaging Rail/Tube
Rds On Max 88mR
Package/Case TO-262-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.5nF
Number of Channels 1
Turn-On Delay Time 20.5ns
Radiation Hardening No
Turn-Off Delay Time 96ns
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 88mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 34A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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