STFI4N62K3
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Краткое описание:
620V 3.8A N-CH Power MOSFET, I2PAKFP, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring SuperMESH process technology. This single, enhancement-mode transistor offers a maximum drain-source voltage of 620V and a continuous drain current of 3.8A. Housed in an I2PAKFP package with 3 pins and a tab, it supports through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±30V and a maximum drain-source on-resistance of 2000mΩ at 10V. The component operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | I2PAKFP |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.6(Max) |
| Package Material | Plastic |
| Package Width (mm) | 4.6(Max) |
| Process Technology | SuperMESH |
| Package Height (mm) | 10.85(Max) |
| Package Length (mm) | 10.4(Max) |
| Seated Plane Height (mm) | 14.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 22nC |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 620V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 2000@10VmOhm |
| Typical Input Capacitance @ Vds | 550@50VpF |
| Maximum Continuous Drain Current | 3.8A |
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