STGP14NC60KD

Производится
STGP14NC60KD - Stmicroelectronics
Увеличить
Краткое описание: 600V 25A IGBT, TO-220, Through Hole
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

600V, 25A Insulated Gate Bipolar Transistor (IGBT) in a TO-220 package. Features a 600V collector-emitter voltage rating, 2V collector-emitter saturation voltage, and 10A forward current. Offers a maximum power dissipation of 80W and operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component boasts a 37ns reverse recovery time and 22.5ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
Series PowerMESH™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220
Current Rating 25A
RoHS Compliant Yes
Forward Current 10A
DC Rated Voltage 600V
Package Quantity 1000
Power Dissipation 28W
Turn-On Delay Time 22.5ns
Radiation Hardening No
Turn-Off Delay Time 116ns
Reach SVHC Compliant No
Max Collector Current 25A
Max Power Dissipation 80W
Reverse Recovery Time 37ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector Base Voltage (VCBO) 600V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.