STGW20NC60V

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STGW20NC60V - Stmicroelectronics
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Краткое описание: 600V 30A Very Fast IGBT Transistor TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Very fast Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 30A continuous collector current. Features a low 2.5V collector-emitter saturation voltage and a maximum power dissipation of 200W. Designed for through-hole mounting in a TO-247-3 package, operating from -55°C to 150°C. Offers fast switching speeds with a 31ns turn-on delay and 100ns turn-off delay. This RoHS compliant component is lead-free.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Series PowerMESH™
Weight 1.340411oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
Current Rating 30A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Turn-On Delay Time 31ns
Radiation Hardening No
Turn-Off Delay Time 100ns
Max Collector Current 60A
Max Power Dissipation 200W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 30A
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V

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