STGW39NC60VD
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Краткое описание:
600V 40A Very Fast IGBT Transistor TO-247
Дополнительная информация
Very fast Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector-Emitter Breakdown Voltage and 40A Continuous Drain Current. This through-hole component offers a maximum collector current of 80A and a power dissipation of 250W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-247 case. Key electrical characteristics include a 1.8V Collector-Emitter Saturation Voltage and a 33ns Turn-On Delay Time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.15mm |
| Height | 20.15mm |
| Length | 15.75mm |
| Series | PowerMESH™ |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-247 |
| Current Rating | 40A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 30 |
| Power Dissipation | 250W |
| Turn-On Delay Time | 33ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 178ns |
| Reach SVHC Compliant | No |
| Max Collector Current | 80A |
| Max Power Dissipation | 250W |
| Reverse Recovery Time | 45ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.4V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
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