STH130N10F3-2

Не рекомендуется для новых проектов
STH130N10F3-2 - Stmicroelectronics
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Краткое описание: N-CHANNEL MOSFET 100V 120A 9.3mR TO-263-3 Surface Mount
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

The STH130N10F3-2 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum continuous drain current of 120A and a maximum drain to source breakdown voltage of 100V. The device has a maximum power dissipation of 250W and is packaged in a TO-263-3 surface mount package. The STH130N10F3-2 is RoHS compliant and suitable for use in high-reliability applications.
RoHS Compliant
Mount Surface Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 7.2ns
Packaging Tape and Reel
Rds On Max 9.3mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 3.305nF
Power Dissipation 250W
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 52ns
Max Power Dissipation 250W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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