STH240N75F3-6

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STH240N75F3-6 - Stmicroelectronics
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Краткое описание: N-Channel 75V 3mR Power MOSFET, 180A, H2PAK-6
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 75V drain-source breakdown voltage and 180A continuous drain current. Offers low 2.6 mOhm typical drain-source on-resistance. Operates with a 20V gate-source voltage and a threshold voltage of 2V. Packaged in a surface-mount H2PAK-6 (TO-263-7) with a maximum power dissipation of 300W. RoHS compliant with a maximum operating temperature of 175°C.
RoHS Compliant
Mount Surface Mount
Width 10.4mm
Height 4.8mm
Length 15.25mm
Series STripFET™ III
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3mR
Package/Case TO-263-7
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 6.8nF
Power Dissipation 300W
Threshold Voltage 2V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 100ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 3MR
Drain to Source Breakdown Voltage 75V

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