STH260N6F6-2
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Краткое описание:
N-CH 60V 1.7mΩ 180A Power MOSFET H2PAK-2
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 180A continuous drain current. Offers low 1.7 mOhm typical on-resistance and 2.4 mOhm maximum. Designed for surface mounting in an H2PAK-2 (TO-263-3) package, this component operates from -55°C to 175°C with a maximum power dissipation of 300W. Key electrical characteristics include a 2V threshold voltage and fast switching times with a 31.4ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.8mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 62.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.4mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 11.8nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 31.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 144.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2MR |
| Drain to Source Breakdown Voltage | 75V |
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