STH260N6F6-6
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Краткое описание:
N-CH Power MOSFET 60V 180A H2PAK SMT
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 180A continuous drain current. This single-element device utilizes STripFET process technology and is housed in an H2PAK surface-mount package with gull-wing leads. Key specifications include a low 0.0024 mOhm drain-source resistance at 10V and a maximum power dissipation of 300,000 mW, operating across a temperature range of -55°C to 175°C.
| PCB | 6 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | H2PAK |
| AEC Qualified | No |
| Configuration | Single Hex Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.37(Max) |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 8.9(Max) |
| Process Technology | STripFET |
| Package Height (mm) | 4.8(Max) |
| Package Length (mm) | 10.4(Max) |
| Seated Plane Height (mm) | 5(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 138nC |
| Typical Gate Charge @ Vgs | 183@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 0.0024@10VmOhm |
| Typical Input Capacitance @ Vds | 11800@25VpF |
| Maximum Continuous Drain Current | 180A |
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