STH270N4F3-6
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Краткое описание:
N-CH MOSFET 40V 180A H2PAK SMT Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET, featuring a 40V drain-source voltage and 180A continuous drain current. This single-element device utilizes StripFET III process technology and offers a low 1.7 mOhm drain-source resistance at 10V. Packaged in an H2PAK surface-mount configuration with gull-wing leads, it provides 7 pins (6 + tab) for robust thermal management. Operating across a wide temperature range from -55°C to 175°C, it is suitable for demanding automotive applications.
| PCB | 6 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 7 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | H2PAK |
| AEC Qualified | Yes |
| Configuration | Single Hex Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.37(Max) |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 8.9(Max) |
| Process Technology | StripFET III |
| Package Height (mm) | 4.8(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 5(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 110nC |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Drain Source Resistance | 1.7@10VmOhm |
| Typical Input Capacitance @ Vds | 7400@25VpF |
| Maximum Continuous Drain Current | 180A |
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