STH300NH02L-6

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STH300NH02L-6 - Stmicroelectronics
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Краткое описание: N-Channel MOSFET 24V 180A 1.2mR H2PAK-6 SM
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 24V drain-source breakdown voltage and 180A continuous drain current. Offers a low 0.95 mOhm typical drain-source on-resistance. Designed for surface mount applications in an H2PAK-6 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. This RoHS compliant component exhibits fast switching characteristics with a turn-on delay of 18ns and a fall time of 94.4ns.
RoHS Compliant
Mount Surface Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 94.4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.2mR
Package/Case TO-263-7
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 7.05nF
Power Dissipation 300W
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 138ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 180A
Drain to Source Voltage (Vdss) 24V
Drain-source On Resistance-Max 1.2MR
Drain to Source Breakdown Voltage 24V

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