STH30N65DM6-7AG
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Краткое описание:
650 V 28 A N-channel MDmesh DM6 power MOSFET
Дополнительная информация
This automotive-grade N-channel power MOSFET is rated for 650 V drain-source voltage and 28 A continuous drain current at 25°C. It uses ST's MDmesh DM6 fast-recovery diode technology to reduce recovery charge and recovery time for efficient switching in demanding bridge topologies and ZVS phase-shift converters. The device is AEC-Q101 qualified and integrates a fast-recovery body diode with high dv/dt ruggedness and avalanche capability. It is supplied in an H2PAK-7 surface-mount package with tape-and-reel packing and a junction temperature range of -55°C to 150°C.
| Fall time | 8ns |
| Rise time | 3.3ns |
| Gate-drain charge | 20nC |
| Input capacitance | 2000pF |
| Total gate charge | 46nC |
| Gate-source charge | 13.5nC |
| Output capacitance | 130pF |
| Turn-on delay time | 17ns |
| Gate-source voltage | ±25V |
| Turn-off delay time | 46ns |
| Reverse recovery time | 126ns |
| Rohs Compliance Grade | Ecopack2 |
| Gate threshold voltage typ | 4.00V |
| Reverse transfer capacitance | 1.5pF |
| Single pulse avalanche energy | 600mJ |
| Drain-source breakdown voltage | 650V |
| Thermal resistance junction-to-case | 0.56°C/W |
| Operating junction temperature range | -55 to 150°C |
| Static drain-source on-resistance max | 115mΩ |
| Static drain-source on-resistance typ | 102mΩ |
| Continuous drain current at case temperature 25°C | 28A |
| Continuous drain current at case temperature 100°C | 18A |
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