STH310N10F7-6
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Краткое описание:
100V N-CH MOSFET, 180A, 2.1mR Rds(on), H2PAK-6
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. Offers low on-resistance with a typical 1.9 mOhm and a maximum of 2.5 mOhm. Designed for surface mounting in an H2PAK-6 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 315W. Key switching characteristics include a 62ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.25mm |
| Series | STripFET™ VI, DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 12.8nF |
| Power Dissipation | 315W |
| Threshold Voltage | 3.5V |
| Turn-On Delay Time | 62ns |
| Turn-Off Delay Time | 148ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 315W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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