STH315N10F7-2
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Краткое описание:
N-Ch MOSFET 100V 180A 2.3mR H2PAK-2 SM
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 100V drain-source breakdown voltage and low 2.1 mOhm typical drain-source on-resistance. This surface-mount device offers a continuous drain current of 180A and a maximum power dissipation of 315W, suitable for demanding applications. The MOSFET operates across a wide temperature range from -55°C to 175°C and is packaged in a TO-263-3 (H2PAK-2) for efficient thermal management. Key switching characteristics include a 62ns turn-on delay and a 40ns fall time, with a 12.8nF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 12.8nF |
| Power Dissipation | 315W |
| Threshold Voltage | 3.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 62ns |
| Turn-Off Delay Time | 148ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 315W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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