STH320N4F6-6
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Краткое описание:
N-Ch 40V 1.1mOhm 200A Power MOSFET TO-263-7
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 1.1 mOhm typical on-resistance. Delivers 200A continuous drain current with a maximum power dissipation of 300W. Surface mountable in an H2PAK-6 (TO-263-7) package, this component offers fast switching with turn-on delay of 28ns and fall time of 95ns. Operating temperature range from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.25mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.3mR |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 13.8nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 190ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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