STI18NM60N
Снят с производства
Краткое описание:
600V 13A N-CH Power MOSFET, I2PAK, Through Hole
Дополнительная информация
N-channel Power MOSFET, 600V drain-source voltage, 13A continuous drain current, and 285mOhm maximum drain-source resistance at 10V. Features a single element configuration with enhancement mode channel type, utilizing MDmesh process technology. Packaged in an I2PAK with 3 through-hole pins and a tab, measuring 10mm length, 4.4mm width, and 8.95mm height. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 110W.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | I2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.4 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.5 |
| Package Width (mm) | 4.4 |
| Process Technology | MDmesh |
| Package Family Name | I2PAK |
| Package Height (mm) | 8.95 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 13.72 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 35nC |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Drain Source Resistance | 285@10VmOhm |
| Typical Input Capacitance @ Vds | 1000@50VpF |
| Maximum Continuous Drain Current | 13A |
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