STI21N65M5
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Краткое описание:
650V 17A N-CH MOSFET, 179mR Rds(on), I2PAK
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 17A continuous drain current. This component offers a low 0.150 Ohm typical drain-to-source resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 1.95nF input capacitance and a 12ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.75mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Rail/Tube |
| Rds On Max | 179mR |
| Nominal Vgs | 4V |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.95nF |
| Power Dissipation | 125W |
| Threshold Voltage | 4V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 179mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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