STI42N65M5
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Краткое описание:
650V 33A N-CH MOSFET, 79mR RdsOn, TO-262
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 33A continuous drain current. This device offers a low 0.070 Ohm typical drain-source resistance and 190W maximum power dissipation. Designed for through-hole mounting in an I2PAK package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 13ns fall time and 61ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.35mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 79mR |
| Nominal Vgs | 4V |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 4.65nF |
| Power Dissipation | 190W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 61ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 79mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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