STI45N10F7

Не рекомендуется для новых проектов
STI45N10F7 - Stmicroelectronics
Краткое описание: N-Ch MOSFET 100V 45A 18mR TO-262 Power Transistor
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. Offers low 0.013 Ohm typical drain-source resistance, with a maximum of 18mR. Operates within a wide temperature range of -55°C to 175°C and supports a maximum power dissipation of 60W. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 8ns.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.35mm
Length 10.4mm
Series DeepGATE™, STripFET™ VII
Weight 0.073511oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Rail/Tube
Rds On Max 18mR
Package/Case TO-262-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.64nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 24ns
Max Power Dissipation 60W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Drain to Source Voltage (Vdss) 100V
Drain to Source Breakdown Voltage 100V

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