STI85NF55
Снят с производства
Краткое описание:
N-CH Power MOSFET 55V 80A I2PAK Through Hole
Дополнительная информация
Automotive N-channel enhancement mode power MOSFET featuring 55V drain-source voltage and 80A continuous drain current. This single-element transistor offers a low 8mΩ drain-source resistance at 10V Vgs and a typical gate charge of 120nC. Housed in an I2PAK through-hole package with 3 pins and a tab, it supports a maximum power dissipation of 300W and operates across a wide temperature range of -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | I2PAK |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.4 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.5 |
| Package Width (mm) | 4.4 |
| Package Family Name | I2PAK |
| Package Height (mm) | 8.95 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 13.72 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 120nC |
| Typical Gate Charge @ Vgs | 120@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 55V |
| Maximum Drain Source Resistance | 8@10VmOhm |
| Typical Input Capacitance @ Vds | 3700@25VpF |
| Maximum Continuous Drain Current | 80A |
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