STI8N65M5
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Краткое описание:
650V 7A N-CH Power MOSFET, I2PAK, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 7A continuous drain current. This single-element enhancement mode transistor utilizes MDmesh process technology and is housed in a 3-pin I2PAK through-hole package with a tab. Key specifications include a maximum drain-source resistance of 600 mΩ at 10V and a typical gate charge of 15 nC. The I2PAK package measures 10mm in length, 4.4mm in width, and 8.95mm in height, with a pin pitch of 2.4mm.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | I2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.4 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 1.5 |
| Package Width (mm) | 4.4 |
| Process Technology | MDmesh |
| Package Family Name | I2PAK |
| Package Height (mm) | 8.95 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 13.72 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 70000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 15nC |
| Typical Gate Charge @ Vgs | 15@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Input Capacitance @ Vds | 690@100VpF |
| Maximum Continuous Drain Current | 7A |
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