STL100N1VH5
Снят с производства
Краткое описание:
N-Ch MOSFET 12V 2.2mR 100A STripFET V SM
Дополнительная информация
N-channel MOSFET featuring 12V drain-source breakdown voltage and a maximum continuous drain current of 100A. Offers a low drain-source on-resistance of 2.2mΩ at 25A, with a maximum specified at 3mΩ. Designed for surface mounting with a compact 5.2mm x 6.15mm x 0.95mm package, this component boasts a maximum power dissipation of 60W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 16ns and turn-on delay of 14.4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.15mm |
| Height | 0.95mm |
| Length | 5.2mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.085nF |
| Power Dissipation | 60W |
| Threshold Voltage | 500mV |
| Turn-On Delay Time | 14.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.2mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 12V |
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