STL10N3LLH5

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STL10N3LLH5 - Stmicroelectronics
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Краткое описание: N-Ch 30V 9A 19mR Power MOSFET, Surface Mount
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers low 19mΩ drain-source on-resistance at a nominal 1V gate-source voltage. Designed for surface mount applications with a PowerFLAT™ 3.3x3.3 package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 50W. Includes fast switching characteristics with turn-on delay time of 4ns and fall time of 3.5ns.
RoHS Compliant
Mount Surface Mount
Series STripFET™ V
Polarity N-CHANNEL
Fall Time 3.5ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 19mR
Nominal Vgs 1V
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 900pF
Power Dissipation 50W
Threshold Voltage 1V
Turn-On Delay Time 4ns
Radiation Hardening No
Turn-Off Delay Time 21ns
Reach SVHC Compliant No
Max Power Dissipation 50W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 19mR
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 11.7R
Drain to Source Breakdown Voltage 30V

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