STL120N2VH5
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Краткое описание:
N-CH MOSFET 20V 120A 3mR 80W Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3mΩ maximum drain-source on-resistance and 80W maximum power dissipation. Designed for surface mount applications with a compact 4.75mm x 5.75mm x 0.88mm package. Includes fast switching characteristics with turn-on delay of 21ns and fall time of 55ns. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.75mm |
| Height | 0.88mm |
| Length | 4.75mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.66nF |
| Power Dissipation | 80W |
| Threshold Voltage | 700mV |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 76ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 20V |
