STL150N3LLH5
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Краткое описание:
30V N-CH MOSFET, 1.75mR RdsOn, 195A ID, PowerFLAT 5x6
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and a low 1.75mΩ maximum drain-source on-resistance. This device offers a continuous drain current of 195A and a maximum power dissipation of 114W. Designed for surface mounting in a 5x6mm PowerFLAT™ package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 17.2ns turn-on delay and 47.8ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 0.95mm |
| Length | 5mm |
| Series | STripFET™ V |
| Polarity | N-CHANNEL |
| Fall Time | 47.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.75mR |
| RoHS Compliant | Yes |
| Input Capacitance | 5.8nF |
| Power Dissipation | 114W |
| Threshold Voltage | 1.55V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 114W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.75mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 195A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.75mR |
| Drain to Source Breakdown Voltage | 30V |
