STL15DN4F5

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STL15DN4F5 - Stmicroelectronics
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Краткое описание: Dual N-Ch MOSFET 40V 9mR 15A PowerFLAT 5x6 SMT
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-channel Power MOSFET featuring 40V drain-source breakdown voltage and 9mΩ maximum drain-source on-resistance. This automotive-grade component offers a continuous drain current of 60A and a maximum power dissipation of 60W. Designed for surface mounting in a PowerFLAT 5x6 double island package, it boasts fast switching speeds with a 18ns turn-on delay and 32ns turn-off delay. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant MOSFET is suitable for demanding automotive applications.
RoHS Compliant
Mount Surface Mount
Width 5.75mm
Height 0.85mm
Length 4.75mm
Series Automotive, AEC-Q101, STripFET™ V
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 5ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 9mR
RoHS Compliant Yes
Input Capacitance 1.55nF
Power Dissipation 60W
Threshold Voltage 2V
Number of Elements 2
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant No
Max Power Dissipation 60W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 9MR
Drain to Source Breakdown Voltage 40V

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