STL160N3LLH6
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Краткое описание:
N-Ch 30V 1.1mR 160A Power MOSFET, Surface Mount
Дополнительная информация
N-channel STripFET™ VI Power MOSFET featuring 30V drain-source breakdown voltage and 1.1mΩ typical drain-source on-resistance. This surface-mount device offers a continuous drain current of 160A and a maximum power dissipation of 80W. It operates within a temperature range of -55°C to 150°C and is housed in a compact PowerFLAT 5x6 package. Key switching characteristics include a 54ns fall time, 18.5ns turn-on delay, and 107.5ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.75mm |
| Height | 0.88mm |
| Length | 4.75mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.375nF |
| Power Dissipation | 80W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18.5ns |
| Turn-Off Delay Time | 107.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.3MR |
| Drain to Source Breakdown Voltage | 30V |
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