STL16N65M5
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Краткое описание:
650V 12A N-CH MOSFET, 299mR Rds On, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 299mΩ drain-source on-resistance. Designed for surface mounting in an 8x8mm package with a height of 0.95mm. Includes fast switching characteristics with 6ns fall time and 25ns turn-on/off delay times. RoHS compliant and operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 8mm |
| Height | 0.95mm |
| Length | 8mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 299mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 299mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 299MR |
| Drain to Source Breakdown Voltage | 650V |
