STL20NM20N
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Краткое описание:
200V 20A N-CH MOSFET, 105mR RdsOn, 80W PD, SM
Дополнительная информация
N-channel MOSFET, designed for small signal and power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 20A. Offers a low 105mΩ Rds(on) and 80W power dissipation. Operates with a gate-to-source voltage up to 30V and includes fast switching times with turn-on/off delays of 40ns. Packaged in a compact 6x5mm chip scale PowerFLAT-8 surface-mount package, suitable for tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 0.81mm |
| Length | 5mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Nominal Vgs | 4V |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 800pF |
| Power Dissipation | 80W |
| Turn-On Delay Time | 40ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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