STL22N65M5
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Краткое описание:
650V N-CH MOSFET, 15A, 210mR, PowerFLAT 8x8 HV
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a low 210mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8x8mm PowerFLAT HV package with a height of 0.95mm. Supports a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Features fast switching characteristics with typical fall time of 7.5ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 8mm |
| Height | 0.95mm |
| Length | 8mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 7.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 210mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.345nF |
| Power Dissipation | 110W |
| Turn-On Delay Time | 43ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 210mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 210MR |
| Drain to Source Breakdown Voltage | 650V |
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