STL30N10F7
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Краткое описание:
N-Ch MOSFET 100V 30A 27mR PowerFLAT 5x6 SM
Дополнительная информация
N-channel Power MOSFET featuring 100V drain-to-source breakdown voltage and 30A continuous drain current. Offers a low 0.027 Ohm typical drain-to-source resistance, with a maximum of 35mR. Operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 75W. This surface-mount device is housed in a 5x6 PowerFLAT package, measuring 6.35mm x 5.4mm x 0.95mm. Designed with DeepGATE™ and STripFET™ VII series technology, it exhibits fast switching characteristics with turn-on delay time of 9.8ns and fall time of 4.6ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.4mm |
| Height | 0.95mm |
| Length | 6.35mm |
| Series | DeepGATE™, STripFET™ VII |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 920pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.8ns |
| Turn-Off Delay Time | 14.8ns |
| Max Power Dissipation | 75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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