STL40N10F7
Производится
Увеличить
Краткое описание:
N-Ch MOSFET, 100V, 40A, 24mR RdsOn, PowerFLAT 5x6
Дополнительная информация
N-channel Power MOSFET featuring 100V drain-source breakdown voltage and a low 24mΩ typical drain-source on-resistance. This device offers a continuous drain current of 40A and a maximum power dissipation of 70W. Designed for surface mounting in a PowerFLAT 5x6 package, it boasts fast switching characteristics with turn-on delay time of 12ns and fall time of 5.6ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is ideal for high-efficiency power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Length | 5.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Polarity | N-CHANNEL |
| Fall Time | 5.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.27nF |
| Power Dissipation | 70W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 24mR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
