STL60N10F7

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STL60N10F7 - Stmicroelectronics
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Краткое описание: N-Ch 100V 18mR Power MOSFET, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and low 18mΩ maximum drain-source on-resistance. This device offers a continuous drain current of 46A and a maximum power dissipation of 5W, operating across a wide temperature range of -55°C to 175°C. Designed for surface mounting in a 5.4mm x 6.35mm x 0.95mm PowerFLAT package, it boasts fast switching characteristics with a typical fall time of 8ns and turn-on delay of 15.2ns. The component is RoHS compliant and lead-free, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 6.35mm
Height 0.95mm
Length 5.4mm
Series DeepGATE™, STripFET™ VII
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 18mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.64nF
Turn-On Delay Time 15.2ns
Turn-Off Delay Time 24ns
Max Power Dissipation 5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 46A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 18mR
Drain to Source Breakdown Voltage 100V

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