STL7N80K5
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Краткое описание:
800V N-CH MOSFET, 3.6A, 1.2 Ohm, PowerFLAT 5x6 VHV
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3.6A continuous drain current. Offers a low 0.95 Ohm typical on-resistance and 1.2 Ohm maximum Rds(on). Designed for surface mount applications in a compact 5x6 VHV package with a height of 0.95mm. Includes fast switching characteristics with turn-on delay of 11.3ns and fall time of 20.2ns. Rated for a maximum power dissipation of 42W and operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.4mm |
| Height | 0.95mm |
| Length | 6.35mm |
| Series | SuperMESH5™ |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 360pF |
| Power Dissipation | 42W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11.3ns |
| Turn-Off Delay Time | 23.7ns |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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