STL80N3LLH6
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Краткое описание:
N-CH Power MOSFET 30V 80A SMT 8-Pin Power Flat
Дополнительная информация
N-channel Power MOSFET, surface mount, featuring 30V drain-source voltage and 80A continuous drain current. This single element device operates in enhancement mode with a maximum drain-source on-resistance of 5.2 mOhm at 10V. Housed in an 8-pin Power Flat package with no leads, it measures 5mm x 6mm x 0.81mm. Key electrical characteristics include a typical gate charge of 17 nC at 4.5V and input capacitance of 1690 pF at 25V. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | Power Flat |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.81 |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.83 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 60000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 5.2@10VmOhm |
| Typical Input Capacitance @ Vds | 1690@25VpF |
| Maximum Continuous Drain Current | 80A |
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