STL90N10F7
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Краткое описание:
N-Ch 100V 70A Power MOSFET, 8mR Rds(on), Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. Offers low 8mΩ maximum drain-source on-resistance and 10.5mΩ typical resistance. Operates with a 20V gate-source voltage and boasts fast switching times with a 19ns turn-on delay and 13ns fall time. Housed in a compact 5.4mm x 6.35mm x 0.95mm PowerFLAT 5x6 surface-mount package, this RoHS compliant component is suitable for high-temperature applications up to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.35mm |
| Height | 0.95mm |
| Length | 5.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.55nF |
| Number of Channels | 2 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8mR |
| Drain to Source Breakdown Voltage | 100V |
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