STM8500
Краткое описание:
Dual N/P-CH MOSFET 55V 4.5A/3A 8-Pin SO Surface Mount
Дополнительная информация
Dual N-channel and P-channel enhancement mode MOSFETs in an 8-pin SO package. Features 55V drain-source voltage, 4.5A continuous drain current for N-channel and 3A for P-channel. Offers low on-resistance of 50mOhm (N-channel) and 110mOhm (P-channel) at 10V. Surface-mount design with gull-wing leads, suitable for plastic package applications. Operating temperature range from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.99(Max) |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.75(Max) |
| Package Length (mm) | 4.98(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 19@N Channel|20@P ChannelnC |
| Typical Gate Charge @ Vgs | 19@10V|[email protected]@N Channel|20@10V|[email protected]@P ChannelnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 55V |
| Maximum Drain Source Resistance | 50@10V@N Channel|110@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 900@25V@N Channel|970@30V@P ChannelpF |
| Maximum Continuous Drain Current | 4.5@N Channel|3@P ChannelA |
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