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Краткое описание:
N-Channel 100V 1A 800mR SOT-223 Power MOSFET
Дополнительная информация
N-Channel Power MOSFET, SOT-223 package, featuring 100V drain-source breakdown voltage and 1A continuous drain current. Offers 800mΩ drain-source resistance (Rds On Max) and 2.5W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with a threshold voltage of 3V. Includes fast switching characteristics with turn-on delay of 4ns and fall time of 6.5ns. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 6.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | SOT-223 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 4000 |
| Input Capacitance | 105pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 4ns |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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