STN1NK60Z

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STN1NK60Z - Stmicroelectronics
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Краткое описание: 600V N-CH Power MOSFET, 15R RdsOn, SOT-223
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET with 600V drain-source breakdown voltage and 15 Ohm maximum drain-source on-resistance. Features 300mA continuous drain current and 3.3W maximum power dissipation. This surface-mount device in a SOT-223 package offers fast switching with turn-on delay of 5.5ns and fall time of 18ns. Operating temperature range is -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 15R
Package/Case SOT-223
Current Rating 250mA
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 4000
Input Capacitance 94pF
Power Dissipation 3.3W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 5.5ns
Radiation Hardening No
Turn-Off Delay Time 13ns
Reach SVHC Compliant No
Max Power Dissipation 3.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 15R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 300mA
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 15R
Drain to Source Breakdown Voltage 600V

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