STN3PF06
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Краткое описание:
P-Channel 60V 2.5A SOT-223 Power MOSFET
Дополнительная информация
P-Channel Power MOSFET, SOT-223 package, featuring a -60V Drain to Source Breakdown Voltage and 2.5A Continuous Drain Current. Offers a low Drain-source On Resistance of 220mR (max) and 200mR (typ). Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 4V. This surface mount device boasts fast switching times with a 17ns fall time and 20ns turn-on delay, dissipating up to 2.5W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| Series | STripFET™ |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 220mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | -2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 850pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 220mR |
| Drain to Source Breakdown Voltage | -60V |
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