STN4NF06L
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Краткое описание:
N-Ch MOSFET, 60V, 4A, 70mR Rds(on), SOT-223
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 60V drain-source breakdown voltage and 4A continuous drain current. This surface-mount device offers a low 70mΩ typical drain-source on-resistance and 3.3W maximum power dissipation. Designed with STripFET™ II technology, it operates across a wide temperature range from -55°C to 150°C and is packaged in a SOT-223 for tape and reel distribution. Key switching characteristics include a 9ns turn-on delay and 20ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 340pF |
| Power Dissipation | 3.3W |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70mR |
| Drain to Source Breakdown Voltage | 60V |
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