STP100N10F7
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Краткое описание:
100V 80A N-Channel MOSFET TO-220 8mR Rds(on)
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This TO-220 package component offers a low 6.8mΩ typical drain-source on-resistance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports up to 150W power dissipation. Key switching characteristics include a 16ns fall time and 27ns turn-on delay time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | StripFET™ VII, DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 8mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 4.39nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8MR |
| Drain to Source Breakdown Voltage | 100V |
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